PMN34LN m3d302 1. product pro?le 1.1 description n-channel enhancement mode ?eld-effect transistor in a plastic package using trenchmos? technology. product availability: PMN34LN in sot457 (tsop6). 1.2 features n low on-state resistance in small surface mount package. 1.3 applications n dc-to-dc primary side. 1.4 quick reference data 2. pinning information n v ds 20 v n i d 5.7 a n p tot 1.75 w n r dson 34 m w table 1: pinning - sot457 (tsop6), simpli?ed outline and symbol pin description simpli?ed outline symbol 1,2,5,6 drain (d) sot457 (tsop6) 3 gate (g) 4 source (s) mbk092 top view 13 2 4 5 6 s d g mbb076 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
3. limiting values table 2: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 20 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w -20v v gs gate-source voltage (dc) - 15 v i d drain current (dc) t sp =25 c; v gs =10v; figure 2 and 3 - 5.7 a t sp = 100 c; v gs =10v; figure 2 - 3.6 a i dm peak drain current t sp =25 c; pulsed; t p 10 m s; figure 3 - 22.9 a p tot total power dissipation t sp =25 c; figure 1 - 1.75 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source (diode forward) current (dc) t sp =25 c - 1.45 a i sm peak source (diode forward) current t sp =25 c; pulsed; t p 10 m s - 5.95 a 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 PMN34LN product specification
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